Semiconductor Group 1 Nov-28-1996
BAV 70S
Silicon Switching Diode Array
• For high speed switching applications
• Common cathode
• Internal (galvanic) isolated Diodes Arrays
in one package
Type Marking Ordering Code Pin Configuration Package
BAV 70S A4s Q62702-A1097 1/4=A1 2/5=A2 3/6=C1/2 SOT-363
Maximum Ratings per Diode
Parameter Symbol Values Unit
Diode reverse voltage V
R
70 V
Peak reverse voltage V
RM
70
Forward current I
F
200 mA
Surge forward current, t = 1 µs I
FS
4.5 A
Total Power dissipation
T
S
= 85 °C
P
tot
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 530 K/W
Junction - soldering point R
thJS
≤ 260
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu