1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0077C0111C0110C0111C0108C0105C0116C0104C0105C0099 C0068C0117C0097C0108 C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
C0067C0111C0109C0109C0111C0110 C0067C0097C0116C0104C0111C0100C0101
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BAV70LT1 = A4
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 µAdc)
V
(BR)
70 — Vdc
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc)
(V
R
= 70 Vdc, T
J
= 150°C)
I
R
—
—
—
60
2.5
100
µAdc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
— 1.5 pF
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
—
—
—
—
715
855
1000
1250
mVdc
Reverse Recovery Time R
L
= 100 Ω
(I
F
= I
R
= 10 mAdc, V
R
= 5.0 Vdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
t
rr
— 6.0 ns
1. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
2. Alumina = 0.4 C0002 0.3 C0002 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BAV70LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0086C0055C0048C0076C0084C0049
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
 Motorola, Inc. 1996
3
CATHODE
ANODE
1
2
ANODE