BAV23S
器件描述:HIGH VOLTAGE GENERAL PURPOSE DIODE
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器件资料摘要:
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
B V Breakdown Voltage 250 V I R = 100 uA
I R Reverse Current (single device) 100 nA V R = 200 V
100 uA V R = 200 V T A = +150 Deg C
Reverse Current (series connection) 100 nA V R = 400 V
100 uA V R = 400 V T A = +150 Deg C
V F Forward Voltage (single device) 1.00 V I F = 100 mA
1.25 V I F = 200 mA
Forward Voltage (series connection) 2.00 V I F = 100 mA
2.50 V I F = 200 mA
T RR Reverse Recovery Time 50 nS I F = I R = 30 mA
I RR = 3.0 mA R L = 100 ohms
TEMPERATURES
Storage Temperature 150 Degrees C
Operating Junction Temperature 150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C 350 mW
Derating Factor per Degree C 2.8 mW
VOLTAGES & CURRENTS
V RRM Repetitive Peak Reverse Voltage 250 V
(Single Device)
V RRM Repetitive Peak Reverse Voltage 500 V
(Series Connection)
V RWM Continuous Peak Reverse Voltage 200 V
(Single Device)
V RWM Continuous Peak Reverse Voltage 400 V
(Series Connection)
IO Average Rectified Current 200 mA
IF DC Forward Current 400 mA
if Recurrent Peak Forward Current 700 mA
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 microsec 9.0 A
Pulse Width = 100 microsec 3.0 A
Pulse Width = 10 millisec 1.7 A
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
PD . . . .350 mW @ T A = 25 Deg C
BV . . . .250 V (M IN ) @ I R = 100 uA
TRR . . . 50 nS @ I F =I R = 30 mA I RR = 3.0 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
3
21
CONNECTION DIAGRAMS
L30
PACKAGE
TO-236AB (Low)
(SOT-23)
3
1 2
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junction temperature of 150 degrees C and junction-to-ambient thermal resistance of 357 degrees C
per Watt. (Derating factor of 2.8 milliwatts per degree C)
BAV23S
HIGH VOLTAGE GENERAL PURPOSE DIODE