EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAV19WS

器件描述:SMALL SIGNAL DIODES
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:118.34KB,共4页
Sponsor by e络盟
器件资料摘要:
BAV19WS THRU BAV21WS
SMALL SIGNAL DIODES
FEATURES
currency1 Silicon Epitaxial Planar Diodes
currency1 For general purpose
currency1 These diodes are also available in other case styles
including: the DO-35 case with the type designations
BAV19 to BAV21, the Mini-MELF case with the type
designations BAV100 to BAV103, the SOT-23 case with
the type designation BAS19 - BAS21 and the SOD-123
case with the type designation BAV19W-BAV21W.
MECHANICAL DATA
Case: SOD-323 Plastic Case
Weight: approx. 0.004 g
Marking Code: BAV19WS=A8
BAV20WS=A81
BAV21WS=A82
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS VALUE UNITS
Continuous Reverse Voltage BAV19WS VR 100 Volts
BAV20WS VR 150 Volts
BAV21WS VR 200 Volts
Repetitive Peak Reverse Voltage BAV19WS VRRM 120 Volts
BAV20WS VRRM 200 Volts
BAV21WS VRRM 250 Volts
Forward DC Current at Tamb = 25 °C IF 250
1)
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load Io 200
1)
mA
at T
amb
= 25 °C and f ‡ 50 Hz
Repetitive Peak Forward Current
at f ‡ 50 Hz, Q = 180 °, Tamb = 25 °C
IFRM 625
1)
mA
Surge Forward Current at t < 1 s, Tj = 25 °C IFSM 1 Amps
Power Dissipation at Tamb = 25 °C Ptot 200
1)
mW
Junction Temperature Tj 150
1)
°C
Storage Temperature Range TS –65 to + 150
1)
°C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
SOD-323
m
a
x
.
.
006 (0.
15)
min. .010 (0.25)
.012 (0.3)
.
076 (1.95)
.
112 (2.85)
.059 (1.5)
m
a
x
.
.0
0
4
(0
.1
)
m
a
x
.
.
049 (1.
25)
Cathode Mark
Top View
.
100 (2.55)
.
0
65 (
1
.
65)
.043 (1.1)
Dimensions are in inches and (millimeters)
12/11/98
NEW PRODUCT NEW PRODUCT NEW PRODUCT