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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAV199LT1

器件描述:Dual Series Switching Diode
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:66.22KB,共4页
Sponsor by e络盟
器件资料摘要:
1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0068C0117C0097C0108 C0083C0101C0114C0105C0101C0115 C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAV199LT1 to order the 7 inch/3,000 unit reel
Use BAV199LT3 to order the 13 inch/10,000 unit reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
215 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
Repetitive Peak Reverse Voltage V
RRM
70 Vdc
Average Rectified Forward Current
(1)
(averaged over any 20 ms period) I
F(AV)
715 mAdc
Repetitive Peak Forward Current I
FRM
450 mAdc
Non–Repetitive Peak Forward Current t = 1.0 µs
t = 1.0 ms
t = 1.0 A
I
FSM
2.0
1.0
0.5
Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–65 to +150 °C
DEVICE MARKING
BAV199LT1 = JY
1. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
2. Alumina = 0.4 C0002 0.3 C0002 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BAV199LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0086C0049C0057C0057C0076C0084C0049
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
 Motorola, Inc. 1997
ANODE
1
CATHODE
2
3
CATHODE/ANODE
REV 1