BAV199
器件描述：Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：98.37KB，共4页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
Silicon Low Leakage Diode Array BAV 199
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAV 199 Q62702-A921JYs SOT-23
Parameter Symbol Values Unit
Reverse voltage VR 70 V
Forward current IF 200 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TS =31˚C Ptot 330 mW
Storage temperature range Tstg – 65 … + 150
Peak reverse voltage VRM 70
Surge forward current, t = 1 µs IFS 4.5 A
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 500 K/W
Junction - soldering point Rth JS ≤ 360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 Low-leakage applications
a71 Medium speed switching times
a71 Connected in series
5.91
Silicon Low Leakage Diode Array BAV 199
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAV 199 Q62702-A921JYs SOT-23
Parameter Symbol Values Unit
Reverse voltage VR 70 V
Forward current IF 200 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TS =31˚C Ptot 330 mW
Storage temperature range Tstg – 65 … + 150
Peak reverse voltage VRM 70
Surge forward current, t = 1 µs IFS 4.5 A
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 500 K/W
Junction - soldering point Rth JS ≤ 360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 Low-leakage applications
a71 Medium speed switching times
a71 Connected in series
5.91