Mar-10-2004
1
BAV199...
Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
• Series pair configuration
BAV199
BAV199F
G33
G31
G44 G32
G32
G44 G31
Type Package Configuration Marking
BAV199
BAV199F*
SOT23
TSFP-3
series
series
JYs
JYs
* Preliminary
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage V
RM
85
Forward current I
F
200 mA
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
I
FSM

4.5
0.5
A
Total power dissipation
BAV199, T
S
≤ 31°C
BAV199F, T
S
≤ tbd
P
tot

330
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150