FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
DO-35
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3
.8)
max.
∅
Cathode
.020 (0.52)
Mark
max.
∅
.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
BAV19 THRU BAV21
Symbol Value Unit
Reverse Voltage BAV19
BAV20
BAV21
V
R
V
R
V
R
120
200
250
V
V
V
Forward DC Current at T
amb
= 25 °C I
F
250
1)
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 °C and f ≥ 50 Hz
I
0
200
1)
mA
Repetitive Peak Forward Current
at f ≥ 50 Hz, Θ = 180 °, T
amb
= 25 °C
I
FRM
625
1)
mA
Surge Forward Current at t < 1 s, T
j
= 25 °C I
FSM
1A
Power Dissipation at T
amb
= 25 °C P
tot
500
1)
mW
Junction Temperature T
j
175
1)
°C
Storage Temperature Range T
S
–65 to +175
1)
°C
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other
case styles including: the SOD-123 case
with the type designation BAV19W - BAV21W,
the MiniMELF case with the type designation
BAV101 - BAV103, and the SOT-23 case with the
type designation BAS19 - BAS21.
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