LESHAN RADIO COMPANY, LTD.
G8–1/2
1
3
2
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
BAV170LT1
This switching diode has the following features:
.
Low Leakage Current Applications
.
Medium Speed Switching Times
.
Available in 8 mm Tape and Reel
Use BAV170LT1 to order the 7 inch/3,000 unit reel
Use BAV170LT3 to order the 13 inch/10,000 unit reel
Monolithic Dual Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V R 70 Vdc
Forward Current I F 200 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board
(1)
P D 225 mW
TA = 25°C
Derate above 25°C 1.8 mW°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation P D 300 mW
Alumina Substrate
(2)
TA = 25°C
Derate above 25°C 2.4 mW°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T J , T stg -55 to +150 °C
DEVICE MARKING
BAV170LT1 = JX
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc) V(BR) 70 — Vdc
Reverse Voltage Leakage Current (VR = 70 Vdc) I R — 5.0 nAdc
Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150°C) — 80
Diode Capacitance (V R = 0 V, f = 1.0 MHz) C D — 2.0 pF
Forward Voltage (I F = 1.0 mAdc) V F — 900 mVdc
Forward Voltage (I F = 10 mAdc) — 1000
Forward Voltage (I F = 50 mAdc) — 1100
Forward Voltage (I F = 150 mAdc) — 1250
Reverse Recovery Time R L = 100 Ω t rr — 3.0 µs
(I F = I R = 10 mAdc) (Figure 1)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
ANODE
2
ANODE
3
CATHODE