BAV17...BAV21
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85543
Silicon Epitaxial Planar Diodes
Applications
General purposes
94 9367
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Peak reverse voltage BAV17 V
RRM
25 Vg
BAV18 V
RRM
60 V
BAV19 V
RRM
120 V
BAV20 V
RRM
200 V
BAV21 V
RRM
250 V
Reverse voltage BAV17 V
R
20 Vg
BAV18 V
R
50 V
BAV19 V
R
100 V
BAV20 V
R
150 V
BAV21 V
R
200 V
Forward current I
F
250 mA
Peak forward surge current t
p
=1s, T
j
=25C0176C I
FSM
1 A
Forward peak current f=50Hz I
FM
625 mA
Junction temperature T
j
175 C0176C
Storage temperature range T
stg
–65...+175 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, T
L
=constant R
thJA
350 K/W