Absolute Maximum Ratings* TA = 25
O
C unless otherwise noted
Sym Parameter Value Units
T
stg
Storage Temperature -65 to +200
O
C
T
J
Operating Junction Temperature -65 to +200
O
C
P
D
Total Power Dissipation at T
A
= 25
O
C 500 mW
Linear Derating Factor from T
A
= 25
O
C 3.33 mW/
O
C
R
OJA
Thermal Resistance Junction-to-Ambient 350
O
C/W
W
iv
Working Inverse Voltage 200 V
I
O
Average Rectified Current 200 mA
I
F
DC Forward Current (I F ) 500 mA
i
f
Recurrent Peak Forward Current 600 mA
i
F (surge)
Peak Forward Surge Current (I FSM ) Pulse Width = 1.0 second 1.0 Amp
Pulse Width = 1.0 microsecond 4.0 Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
BAV103
Electrical Characteristics TA = 25
O
C unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
B
V
Breakdown Voltage 250 V I
R
= 100 uA
I
R
Reverse Leakage 100 nA V
R
= 200 V
100 uA V
R
= 200 V T
A
= 150
O
C
V
F
Forward Voltage 1.00 V I
F
= 100 mA
1.25 V I
F
= 200 mA
C
T
Capacitance 5.0 pF V
R
= 0.0 V, f = 1.0 MHz
T
RR
Reverse Recovery Time 50 ns I
F
= I
R
30 mA I
RR
= 1.0 mA
R
L
= 100 Ohms
High Voltage,
General Purpose Diode
© 1997 Fairchild Semiconductor Corporation
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
ORANGE
GREEN
Expansion Gap