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BAV100

器件描述:Small Signal Diodes
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:144.13KB,共4页
Sponsor by e络盟
器件资料摘要:
FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
Dimensions in inches and (millimeters)
MiniMELF
.142 (3.6)
.019 (0.48)

Cathode Mark
.063
(
1
.6)
.134 (3.4)
.055
(
1
.4
)
.011 (0.28)
4/98
BAV100 THRU BAV103
Symbol Value Unit
Reverse Voltage BAV100
BAV101
BAV102
BAV103
V
R
V
R
V
R
V
R
60
120
200
250
V
V
V
V
Forward DC Current at T
amb
= 25 °C I
F
250
1)
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 °C and f ≥ 50 Hz
I
0
200
1)
mA
Repetitive Peak Forward Current
at f ≥ 50 Hz, Θ = 180 °C, T
amb
= 25 °C
I
FRM
625
1)
mA
Surge Forward Current at t < 1 s, T
j
= 25 °C I
FSM
1A
Power Dissipation at T
amb
= 25 °C P
tot
400
1)
mW
Junction Temperature T
j
175 °C
Storage Temperature Range T
S
–65 to +175 °C
1)
Valid provided that electrodes are kept at ambient temperature.
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other
case styles including: the DO-35 case with
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS21.