BAV100...BAV103
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85542
Silicon Epitaxial Planar Diodes
Applications
General purposes
94 9371
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage BAV100 V
RRM
60 Vg
BAV101 V
RRM
120 V
BAV102 V
RRM
200 V
BAV103 V
RRM
250 V
Reverse voltage BAV100 V
R
50 Vg
BAV101 V
R
100 V
BAV102 V
R
150 V
BAV103 V
R
200 V
Peak forward surge current t
p
=1s I
FSM
1 A
Repetitive peak forward current I
FRM
625 mA
Forward current I
F
250 mA
Power dissipation P
V
500 mW
Junction temperature T
j
175 C0176C
Storage temperature range T
stg
–65...+175 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction lead R
thJL
350 K/W
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
500 K/W