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BAT85

器件描述:Schottky Diodes
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:41.51KB,共2页
Sponsor by e络盟
器件资料摘要:
FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
DO-35
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3
.8)
max.

Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
BAT85
Symbol Value Unit
Continuous Reverse Voltage V
R
30 V
Forward Continuous Current at T
amb
= 25 °C I
F
200
1)
mA
Peak Forward Current at T
amb
= 25 °C I
FM
300
1)
mA
Surge Forward Current
at t
p
< 1 s, T
amb
= 25 °C
I
FSM
600
1)
mA
Power Dissipation at T
amb
= 65 °C P
tot
200
1)
mW
Junction Temperature T
j
125 °C
Ambient Operating Temperature Range T
amb
–65 to +125 °C
Storage Temperature Range T
S
–65 to +150 °C
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
For general purpose applications.
This diode features low turn-on volt-
age. The devices are protected by a PN
junction guard ring against excessive volt-
age, such as electrostatic discharges.
This diode is also available in the MiniMELF case
with type designation BAS85.