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BAT86

器件描述:SMALL SIGNAL SCHOTTKY DIODES
器件厂商:MCC [Micro Commercial Components]
厂商主页:http://www.mccsemi.com
文件大小:159.17KB,共1页
Sponsor by e络盟
器件资料摘要:
BAT86
SMALL SIGNAL
SCHOTTKY
DIODES
Features
· For general purpose applications
· These diodes features very low turn-on voltage and fast switching.
www.mccsemi.com
MECHANICAL DATA
· Case: Do-35 glass case
· Polarity: Color band denotes cathode end
· Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
ELECTRICAL CHARACTERISTICS
G01G02G03G04G05
Dimensions in inches and (millimeters)
G01G02G03G04G01G05G06G02G07G08
G09G09G09G09G0AG0BG0C
G03G02G01G07G06G05G0DG0EG02G04G08
G0AG0FG10
G03G02G01G07G06G05G0DG0EG02G04G08
G0AG0FG10
G01G02G01G0EG11G05G0DG02G01G08
G0AG0BG0C
G12G0FG0B
G01G02G01G0DG01G05G01G02G04G0DG08
G0AG0BG0C
G12G0FG0B
Symbols Value Units
Repetitive Peak Reverse Voltage VR 50 V
Forward Continuous Current at T =25
0
C IF 200
1)
mA
Repetitive Peak Forward Current at t<1s,ä< 0.5,TA=25
0
C IFRM 300
1)
mA
Power Dissipation at TA=65
0
C Ptot 200
1)
mW
Junction temperature TJ 125
0
C
Ambient Operating temperature Range TA -55~+125
0
C
Storage Temperature Range TSTG -55~+150
0
C
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Reverse breakdown voltage Tested with 10 A pulsesµ
Leakage current V =25VR
Forward voltage
Pulse Test
at

t 300 s, 2%
I=0.1mA,
at I =1mA,
at I =10mA,
at I =30mA,
at I =100mA
p
F
F
F
F
F
µδ
50
0.5
5
0.460 0.600
8
0.900
0.450
0.380
0.300
Thermal resistance junction to ambient Air
Junction Capacitance at V =1V ,f=1MHzR
Reverse recovery time Form I =10mA,I =10mA,I =1mAFRR
V R)R(B V
V
V
V
V
V
µA
pF
K/W
ns
VF 0.200
VF 0.272
VF
VF 0.365
VF 0.700
IR 0.2
CJ
trr
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
300
G01G02

R JAθ
These devices are protected by a PN junction guard ring against
excessive voltage,such as electrostatic discharges.
· These diode is also available in the Mini-MELF case with type
designation LL86
· Metal-on-silicon Schottky barrier device which is protected by a PN
junction guard ring. The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,and low logic applications.
G01G02G03G04G05G06G07G05G08G08G09G04G03G02G0AG0BG06G07omponents
21201 Itasca Street Chatsworth
G07G18G06G19G0FG1AG0FG0F
G1BG15G05G1CG09G1DG06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG1A
G24G0AG25G1DG06G06G06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG19
MCC