FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
DO-35
m
i
n
.
1
.
08
3 (
2
7.
5
)
m
i
n. 1.0
8
3

(
2
7.
5)
ma
x
.
.
1
5
0
(3
.
8
)
max. ∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
5/98
222
BAT86
Symbol Min. Max. Unit
Continuous Reverse Voltage V
R
–50 V
Forward Continuous Current at T
amb
= 25 °C I
F
– 200
1)
mA
Repetitive Forward Current
at t
p
< 1 s, υ ≤ 0.5, T
amb
= 25 °C
I
FRM
– 500
1)
mA
Power Dissipation at T
amb
= 25 °C P
tot
– 200
1)
mW
Junction Temperature T
j
– 125 °C
Ambient Operating Temperature Range T
amb
–65 +125 °C
Storage Temperature Range T
S
–65 +150 °C
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
For general purpose applications.
This diode features low turn-on volt-
age. The devices are protected by a PN
junction guard ring against excessive volt-
age, such as electrostatic discharges.
Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications.
This diode is also available in the Mini-MELF case
with the type designation BAS86.
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