Feb-14-2003
1
BAT66...
Silicon Schottky Diode
G01 Power rectifier diode
G01 For low-loss, fast-recovery rectification,
meter protection, bias isolation and
clamping purpose
BAT66-05
G33G31
G44G32
G32
G44G31
G34
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration Marking
BAT66-05 SOT223 common cathode BAT66-05
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
30 V
Forward current I
F
2 A
Surge forward current, (t G01 10ms) I
FSM
10
Average forward current (50/60Hz, sinus) I
FAV
1
Total power dissipation
T
S
G01 126°C
P
tot
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01 20
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance