BAT 64-07W
Semiconductor Group
Sep-07-19981
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code PackagePin Configuration
4 = A1BAT 64-07W 67s Q62702-A3470 1 = C1 2 = C2 SOT-3433 = A2
Maximum Ratings
Value UnitParameter Symbol
Diode reverse voltage V40
V
R
250Forward current mA
I
F
120Average forward current (50/60Hz, sinus)
I
FAV
Surge forward current (t< 100m s) I
FSM
800
250 mW
Total power dissipation, T
S
£ 104 °C P
tot
°C
T
j
Junction temperature 150
Storage temperature
T
stg
-55...+150
Thermal Resistance
Junction - ambient
1)
£ 455
K/W
R
thJA
R
thJS
£ 185
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group 1 1998-11-01