BAT64-07
器件描述：Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：88.79KB，共4页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 Jun-27-1996
BAT 64-07
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 64-07 67s Q62702-A964 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
40 V
Forward current I
F
250 mA
Average forward current (50/60Hz, sinus) I
FAV
120
Surge forward current (t ≤ 10ms) I
FSM
800
Total Power dissipation
T
S
= 61 °C
P
tot
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 55 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 495 K/W
Junction - soldering point R
thJS
≤ 355
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
BAT 64-07
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 64-07 67s Q62702-A964 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
40 V
Forward current I
F
250 mA
Average forward current (50/60Hz, sinus) I
FAV
120
Surge forward current (t ≤ 10ms) I
FSM
800
Total Power dissipation
T
S
= 61 °C
P
tot
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 55 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 495 K/W
Junction - soldering point R
thJS
≤ 355
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu