BAT 64...W
Semiconductor Group
Sep-07-19981
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
1
3
VSO05561
2
BAT 64-05W BAT 64-06WBAT 64-04WBAT 64W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAT 64W
BAT 64-04W
BAT 64-05W
BAT 64-06W
63s
64s
65s
66s
Q62702-A1159
Q62702-A1160
Q62702-A1161
Q62702-A1162
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
SOT-3233 = C
3 = C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage 40 V
V
R
Forward current
I
F
mA250
120
I
FAV
Average forward current (50/60Hz, sinus)
Surge forward current (t< 100m s)
800
I
FSM
Total power dissipation BAT 64W, T
S
£ 120°C P
tot
250 mW
Total power dissipat. BAT64-04/06W, T
S
£ 111°C
250
P
tot
Total power dissipation BAR 64-05W, T
S
£ 104°C P
tot
250
150 °C
T
j
Junction temperature
Storage temperature
T
stg
-55...+150
Semiconductor Group 1 1998-11-01