Semiconductor Group 1 Jan-31-1997
BAT 64
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
Pin Configuration
BAT 64-04 BAT64-05 BAT64-06
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 64 63s Q62702-A879 1 = A 3 = C SOT-23
BAT 64-04 64s Q62702-A961 1 = A 2 = C 3 = C/A SOT-23
BAT 64-05 65s Q62702-A962 1 = A 2 = A 3 = C/C SOT-23
BAT 64-06 66s Q62702-A963 1 = C 2 = C 3 = A/A SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
40 V
Forward current I
F
250 mA
Average forward current (50/60Hz, sinus) I
FAV
120
Surge forward current (t ≤ 10ms) I
FSM
800
Total Power dissipation
T
S
= 61 °C
P
tot
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
- 55 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 495 K/W
Junction - soldering point R
thJS
≤ 355
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu