BAT63-099R
器件描述:Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad)
文件大小:87.53KB,共4页
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器件资料摘要:
Semiconductor Group 1 Feb-01-1996
BAT 63-099R
Silicon Schottky Diodes
• Zero bias diode array for mixer and detectors up to
GHz frequencies
• Crossover ring quad
Type Marking Ordering Code Pin Configuration Package
BAT 63-099RSN Q62702-A1105 1 = A 2 = C SOT-143
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
40 V
Forward current I
F
40 mA
Total power dissipation, BAT17W T
A
≤ 97°C P
tot
mW
Total power dissipation, BAT17-04...06W T
S
≤ 92°C P
tot
Junction temperature T
j
150 °C
Operating temperature range T
op
Storage temperature T
stg
- 55 ... + 150
Thermal Resistance
Junction - ambient, BAT17W R
thJA
K/W
Junction - ambient, BAT17-04W...06W R
thJA
Junction - soldering poin, BAT17W R
thJS
Junction - soldering point, BAT17-04W...06W R
thJS