Jul-24-2002
1
BAT63-07WE6811
Silicon Schottky Diode
G01 Low barrie diode for detectors up to GHz
frequencies
G01 For high-speed switching applications
G01 Zero bias detector diode
BAT63-07W
G31
G44G32
G32
G33G34
G44G31
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration L
S
(nH) Marking
BAT63-07WE6811
SOT343 parallel pair 1.6 63s
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
8 V
Forward current I
F
100 mA
Total power dissipation
T
S
G01 103 °C
P
tot
100 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01 470
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance