BAT63
器件描述:Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
文件大小:114.2KB,共3页
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器件资料摘要:
Semiconductor Group 1 10.94
Type Ordering Code Pin Configuration Marking Package
(tape and reel) 1 2 3 4
BAT 63 Q62702-A1004 A1 C2 A2 C1 63 SOT-143
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R
3V
Forward current I
F
100 mA
Junction temperature T
j
150 °C
Storage temperature range T
stg
– 55 … + 150 °C
Thermal Resistance
Junction-ambient
1)
R
th JA
≤ 450 K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Silicon Schottky Diode BAT 63
a71 Low barrier diode for mixer and detectors up to
GHz frequencies