BAT62-07
器件描述：Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：33.6KB，共4页
Sponsor by e络盟器件资料摘要：
BAT 62-07W
Semiconductor Group
Sep-07-19981
Silicon Schottky Diode
• Low barrier diode for detectors up to GHz
frequencies
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type Marking Ordering Code PackagePin Configuration
4=A1Q62702-A1198BAT 62-07W 1=C1 2=C2 3=A2 SOT-34362s
Maximum Ratings
Parameter Symbol UnitValue
V
R
40Diode reverse voltage V
20 mA
I
F
Forward current
Total power dissipation, T
S
= 103 °C P
tot
100 mW
150 °C
T
j
Junction temperature
Storage temperature
T
stg
-55 ...+150
Thermal Resistance
K/W
R
thJA
£ 630
Junction - ambient
1)
Junction - soldering point
R
thJS
£ 470
Semiconductor Group 1 1998-11-01
Semiconductor Group
Sep-07-19981
Silicon Schottky Diode
• Low barrier diode for detectors up to GHz
frequencies
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type Marking Ordering Code PackagePin Configuration
4=A1Q62702-A1198BAT 62-07W 1=C1 2=C2 3=A2 SOT-34362s
Maximum Ratings
Parameter Symbol UnitValue
V
R
40Diode reverse voltage V
20 mA
I
F
Forward current
Total power dissipation, T
S
= 103 °C P
tot
100 mW
150 °C
T
j
Junction temperature
Storage temperature
T
stg
-55 ...+150
Thermal Resistance
K/W
R
thJA
£ 630
Junction - ambient
1)
Junction - soldering point
R
thJS
£ 470
Semiconductor Group 1 1998-11-01