BAT62-03W
器件描述：Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：39.46KB，共4页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 Mar-07-1996
BAT 62-03W
Silicon Schottky Diode
• Low Barrier diode for detectors up to GHz frequencies
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 62-03W L Q62702-A1028 1 = A 2 = C SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
40 V
Forward current I
F
40 mA
Junction temperature T
j
150 °C
Storage temperature T
stg
- 55 ... + 150
Total power dissipation T
S
≤ 85°C P
tot
100 mW
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 650 K/W
Junction - soldering point R
thJS
≤ 810
1) Package mounted on epoxy pcb 15mm x 16.7mmm x 0.7mm
BAT 62-03W
Silicon Schottky Diode
• Low Barrier diode for detectors up to GHz frequencies
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 62-03W L Q62702-A1028 1 = A 2 = C SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
40 V
Forward current I
F
40 mA
Junction temperature T
j
150 °C
Storage temperature T
stg
- 55 ... + 150
Total power dissipation T
S
≤ 85°C P
tot
100 mW
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 650 K/W
Junction - soldering point R
thJS
≤ 810
1) Package mounted on epoxy pcb 15mm x 16.7mmm x 0.7mm