BAT62
器件描述：Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：79.17KB，共3页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
Silicon Schottky Diode BAT 62
a71 Low barrier diode for detectors up to GHz
frequencies.
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
SOT-143BAT 62 Q62702-A97162
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 810 K/W
Junction - soldering point Rth JS ≤ 650
Parameter Symbol Values Unit
Reverse voltage VR 40 V
Forward current IF 20 mA
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 55 … + 150
Total power dissipation, TS ≤ 85 ˚C Ptot 100 mW
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
02.96
Silicon Schottky Diode BAT 62
a71 Low barrier diode for detectors up to GHz
frequencies.
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
SOT-143BAT 62 Q62702-A97162
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 810 K/W
Junction - soldering point Rth JS ≤ 650
Parameter Symbol Values Unit
Reverse voltage VR 40 V
Forward current IF 20 mA
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 55 … + 150
Total power dissipation, TS ≤ 85 ˚C Ptot 100 mW
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
02.96