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BAT62-02W

器件描述:Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:26.34KB,共4页
Sponsor by e络盟
器件资料摘要:
BAT 62-02W
Semiconductor Group
Jul-02-19981
Silicon Schottky Diode
• Low barrier diode for detectors up to GHz
frequencies
1
VES05991
2
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type Marking Ordering Code Pin Configuration Package
BAT 62-02W L Q62702-A1028 1 = C 2 = A SCD-80
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
40 V
Forward current
I
F
40 mA
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-55 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
£ 650
K/W
Junction - soldering point
R
thJS
£ 810
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01