LESHAN RADIO COMPANY, LTD.
BAT54HT1–1/2
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Minia-
ture surface mount package is excellent for hand held and por-
table applications where space is limited.
• Extremely Fast Switching Speed
Low Forward Voltage – 0.35 Volts (Typ) @ IF = 10 mAdc
2
ANODE
1
CATHODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V R 30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board,* PD 200 mW
TA = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient RθJA 635 °C/W
Junction and Storage
T
J
, T
stg
150 °C
Temperature Range
*FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I R = 10 µA) V(BR)R 30 — — Volts
Total Capacitance (V R = 1.0 V, f = 1.0 MHz) CT — 7.6 10 pF
Reverse Leakage (V R = 25 V) IR — 0.5 2.0 µAdc
Forward Voltage (I F = 0.1 mAdc) VF — 0.22 0.24 Vdc
Forward Voltage (I F = 30 mAdc) VF — 0.41 0.5 Vdc
Forward Voltage (I F = 100 mAdc) VF — 0.52 1.0 Vdc
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)
t
rr
— — 5.0 ns
Forward Voltage (I F = 1.0 mAdc) VF — 0.29 0.32 Vdc
Forward Voltage (I F = 10 mAdc) VF — 0.35 0.40 Vdc
Forward Current (DC) IF — — 200 mAdc
Repetitive Peak Forward Current IFRM — — 300 mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc
SOD– 323,CASE 477
1
2
BAT54HT1
JV
MARKING DIAGRAM
12
30 VOLT SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
ORDERING INFORMATION
Device Package Shipping
BAT54HT1 SOD–323 3000/Tape & Reel
Preferred: devices are recommended choices for future use and best overall value.