BAT54
器件描述：SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
器件厂商：ZETEX [Zetex Semiconductors]
文件大小：101.94KB，共2页
Sponsor by e络盟器件资料摘要：
SO
T23 SILICON
EPITAXIAL
SCHOTTKY BARRI
E
R
DI
ODES
I
S
S
U
E 1
S
EPTE
MB
E
R
199
5
a37
FE
A
T
U
R
ES
: Low
V
F
& Hig
h
C
urrent C
apabi
l
i
t
y
A
PPLI
C
ATI
O
N
S
: P
S
U,
Mobile
Tele
c
omm
s
&
SCSI
A
B
S
O
L
U
T
E
M
A
X
I
MUM R
A
T
I
NGS
.
PARAM
E
T
E
R
S
YM
BO
L
V
A
L
U
E
U
N
I
T
C
o
n
t
i
nuous R
e
ver
se V
o
l
t
age
V
R
30
V
F
o
rw
ard
C
u
rren
t
I
F
200
m
A
For
w
a
r
d Vol
t
age
@
I
F
=10
m
A
V
F
400
m
V
R
e
pe
t
i
t
i
ve
P
e
a
k
Forw
ard
C
u
rre
nt
I
FR
M
300
m
A
N
o
n
R
e
pe
t
i
t
i
ve
Forw
ard C
u
rren
t
t
<
1
s
I
FS
M
600
m
A
P
o
w
e
r D
i
ssi
p
a
t
i
on
a
t
T
am
b
=25
C
P
to
t
330
m
W
S
t
o
r
age Tem
p
e
r
at
ur
e
R
a
nge
T
st
g
-
55 t
o
+
150
C
Junct
i
o
n
Tem
p
e
r
at
ur
e
⁄
T
j
125
C
E
L
ECTRI
C
A
L
CHA
R
ACTE
RI
STI
C
S (
a
t
T
am
b
= 25
C
un
l
e
ss o
t
herw
i
s
e sta
t
ed)
.
PARAM
E
T
E
R
SYM
BO
L
M
I
N
.
T
YP
.
M
A
X
.
UNI
T
C
O
N
DI
T
I
ONS
.
R
e
ve
rse
B
r
e
akdo
w
n
Vo
l
t
ag
e
V
(
BR)
R
30
50
V
I
R
=1
0
µ
A
For
w
a
r
d Vol
t
age
V
F
13
5
20
0
28
0
35
0
53
0
240 320 400 500 100
0
mV mV mV mV mV
I
F
=0.
1
m
A
I
F
=1m
A
I
F
=10
m
A
I
F
=30
m
A
I
F
=10
0
m
A
R
e
ve
rse
C
u
rre
n
t
I
R
2.
5
4
µ
A
V
R
=2
5
V
D
i
o
d
e
C
a
paci
t
a
nce
C
D
7.
5
1
0
p
F
f
=
1
M
H
z
,
V
R
=1V
Re
v
e
r
s
e
Re
c
o
v
e
r
Ti
m
e
t
rr
5n
s
s
w
i
t
c
h
e
d
f
r
o
m
I
F
=1
0m
A t
o
I
R
=1
0
m
A
R
L
=10
0
Ω
,
M
eas
ur
e
d
at
I
R
=1m
A
⁄ D
u
al
Devi
ce;
For
si
m
u
l
t
an
eou
s
con
t
i
n
uo
u
s
u
s
e T
j
=
100
C.
3
2
1
3
2
1
2
3
1
31
BAT54 SER
I
ES
1
3
2
BA
T
5
4
B
A
T
54A
BA
T
54S
BA
T54C
D
e
v
i
c
e
T
y
p
e
SI
NG
LE
COM
M
ON
ANO
DE
SERI
E
S
COM
M
O
N
CA
THODE
Pin Conf
igurat
ion
L4Z
L42
L44
L43
Part
mark
ing Det
ail
G33G30
G31G30
G32G30
G30
G2b
G31
G32G35Gb0G43
G2b
G38
G35Gb0G43
T
A
-
A
m
bi
e
n
t
T
e
m
p
er
at
ur
e
(
C
)
P
D
v T
A
C
h
ar
act
e
r
i
s
t
i
c
s
G30G39G30
G31G38
G30
G32G37
G30
G33G33
G30
C
T
v
V
R
C
h
ar
act
e
r
i
s
t
i
c
s
G30G35
G31G30G31G35
G30
G35
G30
G31
G30
G30
G31G35G30
Fo
r
w
a
r
d
V
o
l
t
ag
e
V
F
(V
)
I
F
v
V
F
C
h
ar
act
e
r
i
s
t
i
c
s
G30
G30G2e
G36
G30G2eG33
G2b
G31G32G35Gb0
G43
G31G30
µ
G31G30
G30
µ
G31G6d
G31G30G6d
G31G30
G30
G6d
G31
G30G2e
G39
G2bG38
G35
Gb0
G43
G2bG32
G35
Gb0
G43
G30G2e
G31G35
G30
G2e
G34
G35
G30G2e
G37G35
G31G30
µ
G31G30
G30
µ
G31G30
G6d
G31G6d
Rev
e
r
s
e V
o
l
t
ag
e
V
R
(V
)
I
R
v V
R
C
h
ar
ac
t
e
r
i
st
i
c
s
R
e
ve
r
s
e V
o
l
t
a
g
e V
R
(
V
)
G30G32
G30
G31G30
G33G30
G31
µ
G2bG32G35
Gb0G43
TY
P
I
CA
L
CHARA
C
T
E
RI
S
T
I
C
S
BAT54 SERI
ES
3 - 4
3 - 5
T23 SILICON
EPITAXIAL
SCHOTTKY BARRI
E
R
DI
ODES
I
S
S
U
E 1
S
EPTE
MB
E
R
199
5
a37
FE
A
T
U
R
ES
: Low
V
F
& Hig
h
C
urrent C
apabi
l
i
t
y
A
PPLI
C
ATI
O
N
S
: P
S
U,
Mobile
Tele
c
omm
s
&
SCSI
A
B
S
O
L
U
T
E
M
A
X
I
MUM R
A
T
I
NGS
.
PARAM
E
T
E
R
S
YM
BO
L
V
A
L
U
E
U
N
I
T
C
o
n
t
i
nuous R
e
ver
se V
o
l
t
age
V
R
30
V
F
o
rw
ard
C
u
rren
t
I
F
200
m
A
For
w
a
r
d Vol
t
age
@
I
F
=10
m
A
V
F
400
m
V
R
e
pe
t
i
t
i
ve
P
e
a
k
Forw
ard
C
u
rre
nt
I
FR
M
300
m
A
N
o
n
R
e
pe
t
i
t
i
ve
Forw
ard C
u
rren
t
t
<
1
s
I
FS
M
600
m
A
P
o
w
e
r D
i
ssi
p
a
t
i
on
a
t
T
am
b
=25
C
P
to
t
330
m
W
S
t
o
r
age Tem
p
e
r
at
ur
e
R
a
nge
T
st
g
-
55 t
o
+
150
C
Junct
i
o
n
Tem
p
e
r
at
ur
e
⁄
T
j
125
C
E
L
ECTRI
C
A
L
CHA
R
ACTE
RI
STI
C
S (
a
t
T
am
b
= 25
C
un
l
e
ss o
t
herw
i
s
e sta
t
ed)
.
PARAM
E
T
E
R
SYM
BO
L
M
I
N
.
T
YP
.
M
A
X
.
UNI
T
C
O
N
DI
T
I
ONS
.
R
e
ve
rse
B
r
e
akdo
w
n
Vo
l
t
ag
e
V
(
BR)
R
30
50
V
I
R
=1
0
µ
A
For
w
a
r
d Vol
t
age
V
F
13
5
20
0
28
0
35
0
53
0
240 320 400 500 100
0
mV mV mV mV mV
I
F
=0.
1
m
A
I
F
=1m
A
I
F
=10
m
A
I
F
=30
m
A
I
F
=10
0
m
A
R
e
ve
rse
C
u
rre
n
t
I
R
2.
5
4
µ
A
V
R
=2
5
V
D
i
o
d
e
C
a
paci
t
a
nce
C
D
7.
5
1
0
p
F
f
=
1
M
H
z
,
V
R
=1V
Re
v
e
r
s
e
Re
c
o
v
e
r
Ti
m
e
t
rr
5n
s
s
w
i
t
c
h
e
d
f
r
o
m
I
F
=1
0m
A t
o
I
R
=1
0
m
A
R
L
=10
0
Ω
,
M
eas
ur
e
d
at
I
R
=1m
A
⁄ D
u
al
Devi
ce;
For
si
m
u
l
t
an
eou
s
con
t
i
n
uo
u
s
u
s
e T
j
=
100
C.
3
2
1
3
2
1
2
3
1
31
BAT54 SER
I
ES
1
3
2
BA
T
5
4
B
A
T
54A
BA
T
54S
BA
T54C
D
e
v
i
c
e
T
y
p
e
SI
NG
LE
COM
M
ON
ANO
DE
SERI
E
S
COM
M
O
N
CA
THODE
Pin Conf
igurat
ion
L4Z
L42
L44
L43
Part
mark
ing Det
ail
G33G30
G31G30
G32G30
G30
G2b
G31
G32G35Gb0G43
G2b
G38
G35Gb0G43
T
A
-
A
m
bi
e
n
t
T
e
m
p
er
at
ur
e
(
C
)
P
D
v T
A
C
h
ar
act
e
r
i
s
t
i
c
s
G30G39G30
G31G38
G30
G32G37
G30
G33G33
G30
C
T
v
V
R
C
h
ar
act
e
r
i
s
t
i
c
s
G30G35
G31G30G31G35
G30
G35
G30
G31
G30
G30
G31G35G30
Fo
r
w
a
r
d
V
o
l
t
ag
e
V
F
(V
)
I
F
v
V
F
C
h
ar
act
e
r
i
s
t
i
c
s
G30
G30G2e
G36
G30G2eG33
G2b
G31G32G35Gb0
G43
G31G30
µ
G31G30
G30
µ
G31G6d
G31G30G6d
G31G30
G30
G6d
G31
G30G2e
G39
G2bG38
G35
Gb0
G43
G2bG32
G35
Gb0
G43
G30G2e
G31G35
G30
G2e
G34
G35
G30G2e
G37G35
G31G30
µ
G31G30
G30
µ
G31G30
G6d
G31G6d
Rev
e
r
s
e V
o
l
t
ag
e
V
R
(V
)
I
R
v V
R
C
h
ar
ac
t
e
r
i
st
i
c
s
R
e
ve
r
s
e V
o
l
t
a
g
e V
R
(
V
)
G30G32
G30
G31G30
G33G30
G31
µ
G2bG32G35
Gb0G43
TY
P
I
CA
L
CHARA
C
T
E
RI
S
T
I
C
S
BAT54 SERI
ES
3 - 4
3 - 5