®
BAT 49
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
August 1999 Ed : 1A
DO 41
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 80 V
I
F
Forward Continuous Current* T
a = 70 °C
500 mA
I
FRM
Repetitive Peak Forward Current* tp = 1s
δ ≤ 0.5
3A
I
FSM
Surge non Repetitive Forward Current* t
p
≤ 10ms 10 A
T
stg
T
j
Storage and Junction Temperature Range - 65 to 150
- 65 to 125
°C
°C
TL Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230 °C
ABSOLUTE RATINGS (limiting values)
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 110 °C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: tp ≤ 300µs δ < 2%.
Symbol Test Conditions Min. Typ. Max. Unit
I
R
* * T
j
= 25°CV
R
= 80V 200 µA
V
F
* * T
j
= 25°CI
F
= 10mA 0.32 V
T
j
= 25°
F
= 100mA 0.42
Tj = 25°CIF = 1A 1
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C T
j = 25°C f = 1MHz
V
R
= 0V 120 pF
V
R
= 5V 35
DYNAMIC CHARACTERISTICS
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