®
BAT 41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
August 1999 Ed: 1A
DO 35
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 100 V
IF Forward Continuous Current* T
a
= 25

°C 100 mA
I
FRM
Repetitive Peak Forward Current* t
p
≤ 1s
δ ≤ 0.5
350 mA
I
FSM
Surge non Repetitive Forward Current* t
p
≤ 10ms 750 mA
Ptot Power Dissipation* T
a
= 95°C 100 mW
Tstg
T
j
Storage and Junction Temperature Range - 65 to +150
- 65 to +125
°C
°C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230 °C
ABSOLUTE RATINGS (limiting values)
Symbol Test Conditions Value Unit
Rth(j-a) Junction-ambient* 300 °C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
* * Pulse test: tp ≤ 300µs δ < 2%.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR Tj = 25°CIR = 100µA
100 V
V
F
* * T
j = 25° F = 1mA
0.4 0.45 V
T
j
= 25°CI
F
= 200mA 1
I
R
* * T
j
= 25°C VR = 50V 0.1 µA
T
j
= 100°C 20
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C T
j
= 25°CV
R
= 1V f = 1MHz 2pF
DYNAMIC CHARACTERISTICS
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