EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAT42W

器件描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE
器件厂商:DIODES [Diodes Incorporated]
厂商主页:http://www.diodes.com/
文件大小:68.34KB,共2页
Sponsor by e络盟
器件资料摘要:
DS30016 Rev. 5 - 2 1of 2 BAT42W/BAT43W
BAT42W / BAT43W
SURFACE MOUNTSCHOTTKYBARRIER DIODE
Features
Mechanical Data
c183 Low Forward Voltage Drop
c183 Fast Switching Time
c183 Surface Mount Package Ideally Suited for
Automatic Insertion
c183 Case: SOD-123, Plastic
c183 Case material -ULFlammabilityRating
Classification 94V-0
c183 Moisture sensitivity: Level 1 perJ-STD-020A
c183 Terminals:SolderableperMIL-STD-202,
Method 208
c183 Polarity: Cathode Band
c183 Marking: Date Code & Type Code, See Page 2
c183 Type Codes: BAT42W S7
BAT43W S8
c183 Weight: 0.01 grams (approx.)
c183 Ordering Information: See Page 2
A
B
C
D
E
G
c97
H J
Characteristic Symbol BAT42W / BAT43W Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 V
RMS Reverse Voltage VR(RMS) 21 V
Forward Continuous Current (Note 1) IFM 200 mA
Repetitive Peak Forward Current (Note 1) @ t < 1.0s IFRM 500 mA
Non-Repetitive Peak Forward Surge Current @ t < 10ms IFSM 4.0 A
Power Dissipation Pd 200 mW
Thermal Resistance Junction to Ambient Air (Note 1) Rc113JA 500 c176C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +125 c176C
Maximum Ratings@ TA= 25c176C unless otherwise specified
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on ourwebsite
athttp://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2) V(BR)R 30 c190 VI
R
= 100c109A
Forward Voltage Drop (Note 2) All Types
BAT42W
BAT42W
BAT43W
BAT43W
V
FM
c190
c190
c190
0.26
c190
1.0
0.40
0.65
0.33
0.45
V
I
F
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2.0mA
I
F
= 15mA
Peak Reverse Current (Note 2) IRM c190
500
100
nA
c109A
V
R
= 25V
V
R
= 25V,T
j
= 100c176C
Total Capacitance CT c190 10 pF VR = 1.0V, f = 1.0MHz
Reverse Recovery Time trr c190 5.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
,R
L
= 100c87
Rectification Efficiency c104v80c190 %
R
L
= 15c87, C
L
= 300pF,
f = 45MHz,V
RF
= 2.0V
Electrical Characteristics @ T
A
= 25c176C unless otherwise specified
SOD-123
Dim MinMax
A 3.55 3.85
B 2.55 2.85
C 1.40 1.70
D — 1.35
E 0.55 Typical
G0.25—
H 0.11 Typical
J — 0.10
c97 0c176 8c176
All Dimensions in mm