EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAT42W

器件描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE
器件厂商:WTE [Won-Top Electronics]
厂商主页:http://www.wontop.com/
文件大小:30.52KB,共2页
Sponsor by e络盟
器件资料摘要:
BAT42W / BAT43W 1 of 2 © 2002 Won-Top Electronics
BAT42W / BAT43W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
! Low Turn-on Voltage
! Fast Switching A
! PN Junction Guard Ring for Transient and
ESD Protection
! Designed for Surface Mount Application C
! Plastic Material – UL Recognition Flammability D
Classification 94V-O B
G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01
E
Mechanical Data H
! Case: SOD-123, Molded Plastic G
! Terminals: Plated Leads Solderable per J
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.01 grams (approx.)
! Marking: BAT42W L2
BAT43W L3
Maximum Ratings @T
A
=25°C unless otherwise specified
Characteristic Symbol BAT42W / BAT43W Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 V
Forward Continuous Current (Note 1) IF 200 mA
Repetitive Peak Forward Current (Note 1) @ t < 1.0s IFRM 500 mA
Non-Repetitive Peak Forward Surge Current @ t < 10ms IFSM 4.0 A
Power Dissipation Pd 200 mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1) RG01JA 625 K/W
Operating and Storage Temperature Range Tj, TSTG -55 to +125 °C
Electrical Characteristics @T
A
=25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V(BR)R 30 — — V @ IRS = 100µA
BAT42W 0.4 @ IF = 10mA
BAT42W 1.0 @ IF = 200mA
BAT43W 0.33 @ IF = 2mA
Forward Voltage
BAT43W
VF ——
1.0
V
@ IF = 200mA
Reverse Leakage Current IR ——0.5µA @ V
R
= 25V
Junction Capacitance Cj — — 10 pF V
R
= 1.0V, f = 1.0MHz
Reverse Recovery Time trr —— 5nS
IF = 10mA through IR = 10mA
to IR = 1mA, RL = 100G01
Note: 1. Valid provided that terminals are kept at ambient temperature.
WTE
POWER SEMICONDUCTORS
SOD-123
Dim Min Max
A 3.6 3.9
B 2.5 2.8
C 1.4 1.8
D 0.5 0.7
E —0.2
G 0.4 —
H 0.95 1.35
J —0.12
All Dimensions in mm