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BAT42

器件描述:Schottky Diodes
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:42.34KB,共2页
Sponsor by e络盟
器件资料摘要:
FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
DO-35
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3
.8)
max.

Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
BAT42, BAT43
Symbol Value Unit
Repetitive Peak Reverse Voltage V
RRM
30 V
Forward Continuous Current at T
amb
= 25 °C I
F
200
1)
mA
Repetitive Peak Forward Current
at t
p
< 1 s, δ < 0.5, T
amb
= 25 °C
I
FRM
500
1)
mA
Surge Forward Current at t
p
< 10 ms, T
amb
= 25 °C I
FSM
4
1)
A
Power Dissipation
1)
at T
amb
= 65 °C P
tot
200
1)
mW
Junction Temperature T
j
125 °C
Ambient Operating Temperature Range T
amb
–65 to +125 °C
Storage Temperature Range T
S
–65 to +150 °C
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
For general purpose applications
These diodes feature very low turn-
on voltage and fast switching. These
devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges.
These diodes are also available in the SOD-123
case with the type designations BAT42W to BAT43W
and in the MiniMELF case with type
designations LL42 to LL43.