BAT 17W
Semiconductor Group
Sep-04-19981
Silicon Schottky Diodes
• For mixer applications in the VHF / UHF range
• For high-speed switching applications
1
3
VSO05561
2
BAT 17-05W BAT 17-06WBAT 17W BAT 17-04W
Type Marking Ordering Code Pin Configuration Package
BAT 17W
BAT 17-04W
BAT 17-05W
BAT 17-06W
53s
54s
55s
56s
Q62702-A1271
Q62702-A1272
Q62702-A1273
Q62702-A1274
1 = A
1 = A1
1 = A1
3 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
SOT-3233 = C
3 = C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
4 V
Forward current
I
F
130 mA
Total power dissipation 1) BAT 17W, T
A
£ 97 °C P
tot
150 mW
BAT 17-04W, -05W, -06W , T
S
£ 92 °CP
tot
150
Junction temperature
T
j
150 °C
Operating temperature range
T
op
- 55 ...+150
Storage temperature
T
stg
- 55 ...+150
Thermal Resistance
Junction - ambient
1)
BAT 17W
R
thJA
£ 435
K/W
Junction - ambient
1)
BAS 17-04W ...
R
thJA
£ 550
Junction - soldering point BAT 17W
R
thJS
£ 355
Junction - soldering point BAT 17-04W ...
R
thJS
£ 390
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Semiconductor Group 1 1998-11-01