Nov-07-2002
1
BAT165...
Silicon Schottky Diode
G01 Medium current Schottky rectifier diode
G01 For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
G01 Miniature plastic package for surface
mounting (SMD)
BAT165
G31 G32
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration Marking
BAT165 SOD323 single C/White
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
40 V
Forward current I
F
750 mA
Surge forward current, (t G01 10ms) I
FSM
2.5 A
Average forward current (50/60Hz, sinus) I
FAV
500 mA
Total power dissipation
T
S
G01 66°C
P
tot
600 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01 140
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance