BAT15-04
器件描述：Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：67.83KB，共3页
Sponsor by e络盟器件资料摘要：
Type Ordering Code Pin Configuration Marking Package
(tape and reel) 1 2 3
BAT 15-04 Q62702-A504 A – C S8 SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R
4V
Forward current I
F
110 mA
Total power dissipation T
S
£ 55 C P
tot
100 mW
Operating temperature range T
op
– 55 … + 150 C
Storage temperature range T
stg
– 55 … + 150 C
Thermal Resistance
Junction-ambient
1)
R
th JA
£ 1090 K/W
Junction-soldering point R
th JS
£ 930 K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Silicon Dual Schottky Diode BAT 15-04
l DBS mixer applications to 12 GHz
l Low noise figure
l Low barrier type
Semiconductor Group 1 10 94
(tape and reel) 1 2 3
BAT 15-04 Q62702-A504 A – C S8 SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R
4V
Forward current I
F
110 mA
Total power dissipation T
S
£ 55 C P
tot
100 mW
Operating temperature range T
op
– 55 … + 150 C
Storage temperature range T
stg
– 55 … + 150 C
Thermal Resistance
Junction-ambient
1)
R
th JA
£ 1090 K/W
Junction-soldering point R
th JS
£ 930 K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Silicon Dual Schottky Diode BAT 15-04
l DBS mixer applications to 12 GHz
l Low noise figure
l Low barrier type
Semiconductor Group 1 10 94