Semiconductor Group 1 28/Jan/1998
BUZ111S
SPP80N05
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Pin 1 Pin 2 Pin 3
G D S
Type VDS ID RDS(on) Package Ordering Code
BUZ111S 55 V 80 A 0.008 Ω TO-220 AB Q67040-S4003-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 100 °C
ID
80
A
Pulsed drain current
TC = 25 °C
IDpuls
320
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25 Ω
L = 220 µH, Tj = 25 °C
EAS
700
mJ
Avalanche current,limited by Tjmax IAR 80 A
Avalanche energy,periodic limited by Tjmax EAR 25 mJ
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt
6
kV/µs
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25 °C
Ptot
250
W