BAT14-099
器件描述：Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：79.95KB，共4页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
Silicon Dual Schottky Diode BAT 14-099
a71 DBS mixer application to 12 GHz
a71 Low noise figure
a71 Medium barrier type
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAT 14-099 Q62702-A3461S9 SOT-143
Parameter Symbol Values Unit
Forward current IF 90 mA
Power dissipation, TS ≤ 55 ˚C Ptot 100 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Operating temperature range Top – 55 … + 150
Thermal Resistance
Junction – ambient
2)
Rth JA ≤ 1090 K/W
Junction – soldering point Rth JS ≤ 930
Reverse voltage VR 4V
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
02.96
Silicon Dual Schottky Diode BAT 14-099
a71 DBS mixer application to 12 GHz
a71 Low noise figure
a71 Medium barrier type
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAT 14-099 Q62702-A3461S9 SOT-143
Parameter Symbol Values Unit
Forward current IF 90 mA
Power dissipation, TS ≤ 55 ˚C Ptot 100 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Operating temperature range Top – 55 … + 150
Thermal Resistance
Junction – ambient
2)
Rth JA ≤ 1090 K/W
Junction – soldering point Rth JS ≤ 930
Reverse voltage VR 4V
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
02.96