BAT14
器件描述:Silicon Schottky Diode
文件大小:386.71KB,共3页
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器件资料摘要:
Feb-03-2003
1
BAT14...
Silicon Schottky Diode
G01 DBS mixer applications up to 12 GHz
G01 Low noise figure
G01 Low barrier type
BAT14-03W
G31 G32
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration L
S
(nH) Marking
BAT14-03W SOD323 single 1.8 O/white
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
4 V
Forward current I
F
90 mA
Total power dissipation
T
S
G01 85 °C
P
tot
100 mW
Junction temperature T
j
150 °C
Operating temperature range T
op
-55 ... 125
Storage temperature T
stg
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
G01 690
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance