BAT114-099R
器件描述：Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：46.93KB，共3页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 02.96
Silicon Crossover Ring Quad Schottky Diode BAT 114-099R
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code
(taped)
Pin Configuration Package
1)
BAT 114-099R 14s Q62702-A1006 SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter Symbol Limit Values Unit
Forward current I
F
90 mA
Operation temperature T
op
− 55 to + 150 °C
Storage temperature T
stg
− 55 to + 150 °C
Power dissipation, T
S
≤ 70 °C P
tot
100 mW
Features
• High barrier diode for double balanced mixers,
phase detectors and modulators
Silicon Crossover Ring Quad Schottky Diode BAT 114-099R
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code
(taped)
Pin Configuration Package
1)
BAT 114-099R 14s Q62702-A1006 SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter Symbol Limit Values Unit
Forward current I
F
90 mA
Operation temperature T
op
− 55 to + 150 °C
Storage temperature T
stg
− 55 to + 150 °C
Power dissipation, T
S
≤ 70 °C P
tot
100 mW
Features
• High barrier diode for double balanced mixers,
phase detectors and modulators