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BAS85

器件描述:Schottky Diodes
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:42.47KB,共2页
Sponsor by e络盟
器件资料摘要:
FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
Dimensions in inches and (millimeters)
MiniMELF
.142 (3.6)
.019 (0.48)

Cathode Mark
.063
(
1
.6)
.134 (3.4)
.055
(
1
.4
)
.011 (0.28)
4/98
BAS85
Symbol Value Unit
Continuous Reverse Voltage V
R
30 V
Forward Continuous Current at T
amb
= 25 °C I
F
200
1)
mA
Peak Forward Current at T
amb
= 25 °C I
FM
300
1)
mA
Surge Forward Current
at t
p
< 1 s, T
amb
= 25 °C
I
FSM
600
1)
mA
Power Dissipation at T
amb
= 65 °C P
tot
200
1)
mW
Junction Temperature T
j
125 °C
Storage Temperature Range T
S
–55 to +150 °C
1)
Valid provided that electrodes are kept at ambient temperature.
For general purpose applications
This diode features low turn-on voltage.
The devices are protected by a PN junc-
tion guard ring against excessive voltage,
such as electrostatic discharges.
This diode is also available in a DO-35 case with type
designation BAT85.