DS30189 Rev. A-5 1 of 1 BAS85
Features
BAS85
SILICON SCHOTTKY BARRIER DIODE
c183 For general applications
c183 Low turn-on voltage
c183 PN junction guard ring
Characteristic Symbol Value Unit
Continuous reverse voltage VR 30 V
Forward continuous current* IF 200 mA
Peak forward current* IFM 300 mA
Surge forward current* @ tp = 1s IFSM 600 mA
Power dissipation* @ T
A
= 65c176C Ptot 200 mW
Junction temperature Tj 125 c176C
Operating temperature range TA -65 to +125 c176C
Storage temperature range TSTG -65 to +150 c176C
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
* Valid provided that electrodes are kept at ambient temperature.
Characteristic Symbol Min Typ Max Unit
Reverse breakdown voltage
10 c109A pulses
V
(BR)R 30 — — V
Electrical Characteristics
@ T
j
= 25c176C unless otherwise specified
c183 Glass case
c183 Weight: 0.05g (approx)
Mechanical Data
C
A
B
Min Max
A 3.4 3.6
B 1.40 1.50
C 0.20 0.40
All Dimensions in mm