Semiconductor Group 1
Silicon Switching Diodes BAS 79 A
… BAS 79 D
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Q62702-A914
Q62702-A915
Q62702-A916
Q62702-A917
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
SOT-223
Thermal Resistance
Junction - ambient
2)
Rth JA K/W≤ 170
Junction - soldering point Rth JS ≤ 30
Parameter Symbol Values
BAS BAS BAS BAS
79 A 79 B 79 C 79 D
Unit
Reverse voltage VR V
Peak forward current IFM
Forward current IF A
Junction temperature Tj ˚C
Total power dissipation, TS = 114 ˚C
2)
Ptot W
Storage temperature range Tstg
Peak reverse voltage VRM
50 100 200 400
1
1
1.2
150
– 65 … + 150
50 100 200 400
Surge forward current, t = 1 µs IFS 10
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 Switching applications
a71 High breakdown voltage
a71 Common cathode
5.91