EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAS70W

器件描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE
器件厂商:DIODES [Diodes Incorporated]
厂商主页:http://www.diodes.com/
文件大小:53.18KB,共1页
Sponsor by e络盟
器件资料摘要:
DS30113 Rev. A-2 1 of 1 BAS70W/ -04/ -05/ -06
c183 Low Turn-on Voltage
c183 Fast Switching
c183 PN Junction Guard Ring for Transient and
ESD Protection
c183 Ultra-Small Surface Mount Package
Features
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
Mechanical Data
c183 Case: SOT-323, Molded Plastic
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Polarity: See Diagrams
c183 Marking: See Diagrams
c183 Mounting Position: Any
c183 Approx. Weight: 0.006 grams
BAS70W/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
SOT-323
Dim Min Max
A 0.30 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
All Dimensions in mm
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Test period <3000c109s.
Electrical Ratings
@ T
A
= 25°C unless otherwise specified
BAS70W Marking: K73 BAS70W-04 Marking: K74 BAS70W-05 Marking: K75
BAS70W-06 Marking: K76
Characteristic Symbol BAS70W Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70 V
RMS Reverse Voltage VR(RMS) 49 V
Forward Continuous Current (Note 1) IF 70 mA
Non-Repetitive Peak Forward Surge Current @ t
p
c60 1.0s IFSM 100 mA
Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance Junction to Ambient Air (Note 1) Rc113JA 625 K/W
Operating Junction Temperature Range Tj -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
Maximum Ratings and Electrical Characteristics, Single Diode
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2) V(BR)R 70 — — I
R
= 10c109A
Forward Voltage VFM —
410
1000
mV
t
p
<300µs, I
F
= 1.0mA
t
p
<300µs, I
F
= 15mA
Peak Reverse Current IRM c190 100 nA tp < 300µs, VR = 50V
Junction Capacitance Cj c190 2.0 pF VR = 0V, f = 1.0MHz
Reverse Recovery Time trr — 5.0 ns
I
F
= I
R
= 10mA to I
R
= 1.0mA,
Irr = 0.1 x I
R
, R
L
= 100c87