LESHAN RADIO COMPANY, LTD.
BAS70LT1–1/2
SCHOTTKY Barrier Diode
BAS70LT1
1
3
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
*
70V SCHOTTKY BARRIER DIODES
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
Low Forward Voltage — 0.75 Volts (Typ) @ IF = 10 mAdc
ANODE
1
CATHODE
3
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
70 Volts
Forward Power Dissipation P
F
@ T
A
= 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Operating Junction and Storage
TJ, Tstg –55 to +150 °C
Temperature Range
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage (I
R
= 10 µA) V
(BR)R
70 — Volts
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz) C
T
— 2.0 pF
Reverse Leakage (V
R
= 50 V) I
R
— 0.1 µAdc
(V
R
= 70V) — 10
Forward Voltage (I
F
= 1.0 mAdc) V
F
— 410 mVdc
Forward Voltage (I
F
= 10 mAdc) V
F
— 750 mVdc
Forward Voltage (I
F
= 15 mAdc) V
F
— 1.0 Vdc
DEVICE MARKING
BAS70LT1= BE