BAS70-07W
Semiconductor Group
Ma -26-19981
Silicon Schottky Diode
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Marking Ordering Code Pin ConfigurationType Package
BAS70-07W 3 = A2 4 = A1 SOT-34377s Q62702-A1186 2 = C21 = C1
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
70 V
Forward current I
F
70 mA
Surge forward current (t< 100m s) I
FSM
100
Total power dissipation, T
S
£ 91 °C P
tot
250 mW
Junction temperature T
j
150 °C
Operating temperature range T
op
- 55 ...+150
Storage temperature T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
£ 285 K/W
Junction - soldering point R
thJS
£ 145
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group 1 1998-11-01