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BAS70-06S

器件描述:Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:46.93KB,共4页
Sponsor by e络盟
器件资料摘要:
BAS 70-06S
Semiconductor Group
Sep-07-19981
Silicon Schottky Diode Array
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• Available with CECC quality assessment
VPS05604
6
3
1
5
4
2
Type Marking Ordering Code Pin Configuration Package
BAS 70-06S 76s Q62702-A3469 1/4=C1 2/5=C2 SOT-3633/6=A1/A2
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
70 V
Forward current
I
F
70 mA
Surge forward current (t< 100m s) I
FSM
100
Total power dissipation, T
S
£ 72 °C P
tot
250 mW
Junction temperature
T
j
150 °C
Operating temperature range
T
op
- 55 ...+150
Storage temperature
T
stg
- 55 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
£ 545
K/W
Junction - soldering point
R
thJS
£ 310
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group 1 1998-11-01