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BAS70

器件描述:HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:97.91KB,共4页
Sponsor by e络盟
器件资料摘要:
T1

Semiconductor Group 1 Draft A03 1998-04-01

HiRel

Silicon Schottky Diode BAS 70



Features
¥

HiRel

Discrete and Microwave Semiconductor

¥ General-purpose diodes for high-speed switching
¥ Circuit protection
¥ Voltage clamping
¥ High-level detecting and mixing
¥ Hermetically sealed microwave package
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5512/020

ESD: E

lectro

s

tatic

d

ischarge sensitive device, observe handling precautions!
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702A1173
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702A674
(see

Chapter Order Instructions

for ordering example)

1)



t



£

10 ms, duty cycle = 10

%

Type Marking Ordering Code Pin Configuration Package

BAS70-T1 (ql)

-

see below T1

Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit

Reverse voltage

V

R

70 V
Forward current

I

F

70 mA
Surge forward current

1)

I

FSM

85 mA
Power dissipation

P

tot

250 mW
Operating temperature range

T

op

-

55 to + 150

°

C
Storage temperature range

T

stg

-

65 to + 150

°

C
Soldering temperature

T

sol

+ 250

°

C
Junction temperature

T

j

150

°

C
Thermal resistance junction-case

R

th(j-c)

100 K/W